Global Gallium Nitride Power Device Market Size, Market Share, Industry Analysis Report 2025

On Aug 18, the latest report "Global Gallium Nitride Power Device Market 2025 by Manufacturers, Regions, Types and Applications, Forecast to 2031" from Global Info Research provides a detailed and comprehensive analysis of the global Gallium Nitride Power Device market. The report provides both quantitative and qualitative analysis by manufacturers, regions and countries, types and applications. As the market is constantly changing, this report explores market competition, supply and demand trends, and key factors that are causing many market demand changes. The report also provides company profiles and product examples of some of the competitors, as well as market share estimates for some of the leading players in 2025.

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According to our (Global Info Research) latest study, the global Gallium Nitride Power Device market size was valued at US$ 350 million in 2024 and is forecast to a readjusted size of USD 1775 million by 2031 with a CAGR of 26.4% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity.
Gallium nitride (GaN) transistors have evolved as an enhanced performance substitute of silicon-based transistors, owing to their ability of fabricating more compact devices for a given resistance value and breakdown voltage as compared to silicon devices. These power devices can attain extremely low-resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicle (EV), hybrid electric vehicle (HEV), photovoltaic inverters, and RF switching. Moreover, these devices are applicable in power supplies for server, IT equipment, high-efficiency & stable power supplies, and EV & HEV devices. Therefore, the increased application influences the GaN power device market growth.

This report is a detailed and comprehensive analysis for global Gallium Nitride Power Device market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.



This report also provides key insights about market drivers, restraints, opportunities, new product launches or approval.
Gallium Nitride Power Device market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type: Power Device、 RF Power Device
Market segment by Application: Telecommunications、 Automotive、 Industrial、 Medical、 Military, Defense & Aerospace、 Others
Major players covered: Cree Inc、 Efficient Power Conversion (EPC) Corporation、 Infineon Technologies、 GaN Systems Inc、 Macom、 Microchip Technology Corporation、 Mitsubishi Electric Corporation、 Navitas Semiconductor、 Qorvo, Inc、 Toshiba、 On Semiconductors、 Panasonic Corporation、 VisIC、 Texas Instruments Inc、 Fujitsu Limited、 Taiwan Semiconductor Manufacturing Company

The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Gallium Nitride Power Device product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Gallium Nitride Power Device, with price, sales quantity, revenue, and global market share of Gallium Nitride Power Device from 2020 to 2025.
Chapter 3, the Gallium Nitride Power Device competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Gallium Nitride Power Device breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment Gallium Nitride Power Device the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the Gallium Nitride Power Device sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2024.and Gallium Nitride Power Device market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Gallium Nitride Power Device.
Chapter 14 and 15, to describe Gallium Nitride Power Device sales channel, distributors, customers, research findings and conclusion.

The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Gallium Nitride Power Device
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace

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